Principal / Senior / Engineer, DRAM Reliability

Our vision is to transform how the world uses information to enrich life for all.

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

Our vision is to transform how the world uses information to enrich life for all.

As a team member of technology development reliability group, you will be working with DRAM device/process development team and circuit design team. You will be responsible for analyzing reliability performance of hot carrier, bias temperature instability, electromigration etc. for each cell transistor, high performance CMOS and advanced interconnect. Also, you will be responsible for reliability model building and the consultation from device development team and circuit design team. The reliability is one of the important pillar for device scaling and state of the art technology development. Its work is based on understanding the semiconductor device physics, DRAM architecture knowledge, DRAM process integration knowledge.  For the new reliability findings during the technology development phase, to point in the right direction is required.
 

Responsibilities and Tasks:

• Develop and implement test methodologies to evaluate wafer-level & circuit-level reliability behavior and performance.

• Analyze results and create reports to deliver decision-ready, actionable recommendations for guiding technology development.

• Collaborate with Process Integration and characterization teams to correlate reliability signature with process conversions and parametric test data.

• Integrate other data sources (inline metro, param, probe) and PFA analysis if need to model physical understanding and decision quality.

• Reliability model building and consultation from process integration team and circuit design team

Requirements:

• Understanding semiconductor device physics.

• Basic knowledge of DRAM or NAND or Emerging Memory.

• Knowledge of statistical data analysis.

• Outstanding communication skills.

• Basic knowledge of circuit operation.

• Candidates with least 3 year or more industry or research institute experience of semiconductor devices.

• Semiconductor device parametric measurement skills and experience in the operation of semiconductor lab instrumentation used for electrical characterization (Parameter Analyzers, Pulse Generators, Capacitance Meters, Wafer Probers, other tools).

• Understanding semiconductor device process technology.

Expectations (any one of):

• Knowledge of programming languages.

• Knowledge of semiconductor device structure and process for each generation.

• Understanding of circuit operation and DRAM product architecture.

• Knowledge of electrical analysis.

Education:

• M.S. or Ph.D. in Electrical Engineering, Physics, Materials Science, or related field with at least 2 years of experience.

About Micron Technology, Inc.

We are an industry leader in innovative memory and storage solutions transforming how the world uses information to enrich life for all. With a relentless focus on our customers, technology leadership, and manufacturing and operational excellence, Micron delivers a rich portfolio of high-performance DRAM, NAND, and NOR memory and storage products through our Micron® and Crucial® brands. Every day, the innovations that our people create fuel the data economy, enabling advances in artificial intelligence and 5G applications that unleash opportunities — from the data center to the intelligent edge and across the client and mobile user experience.

To learn more, please visit micron.com/careers

All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status.

To request assistance with the application process and/or for reasonable accommodations, please contact [email protected]

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