Technology Development Intern, RF GaN (Summer 2027)

About GlobalFoundries

GlobalFoundries (GF) is a leading manufacturer of essential semiconductors, enabling AI at scale from the cloud to the physical world. Through deep partnerships with customers, GF delivers differentiated, power-efficient and high-performance solutions for high-growth markets. GF is a trusted and holistic technology partner for customers around the world. GF's talented, global team remains focused every day on security, longevity and sustainability. For more information, visit www.gf.com.

Internship Program Overview:

Our Interns & Co-ops are our entry-level talent pipeline for GF across the globe. Our goal is to provide students with a meaningful work experience that will equip them with the skills to embark on a career in the fast-paced and growing semiconductor industry after graduation. As an intern at GF, you'll experience one-on-one mentorship, work assignments that prioritize your growth and potential, professional development opportunities, and the chance to network with executives.

Summary of Role: 

We are seeking highly motivated students with interest in semiconductor process and device development to work with our Technology Development team in advancing world class differentiated semiconductor technologies for our 200mm manufacturing fabricator in Vermont (FAB9).   Interns will embed within our project teams of process, integration, and device engineers in developing new process flows and devices in RF GaN technologies, targeting new market applications.

Essential Responsibilities Include

• Innovate with device, test, and process integration team members in defining, designing, and setting up process modules and integration, associated in-line physical and electrical measurement structures and associated measurement and analysis tools to be used in the technology to meet project objectives for electrical performance, reliability, and yield. Focus on GaN HEMT development for RF applications
• Collaborate with the various device, process integration, and program management teams in our technology development team to organize, run, and analyze experiments for the GaN technology as it is being developed to meet performance, reliability, yield, and cost objectives.
• Collaborate with various Fab9 engineering teams outside of the technology development team, such as testing, failure analysis, unit module process, reliability, manufacturing, modeling and TCAD simulation, to facilitate and achieve program success.
• Collaborate with various technical teams to ensure appropriate process module & integration, in-line process controls, and corresponding electrical tests are available for any new devices or concerns.
• Collaborate with teams on physical and electrical device simulation and final characterization analysis to meet best in class device performance. Including potential DC/AC and RF test and analysis of discrete electrical devices including GaN HEMTs, capacitor, Diode, and resistor devices.
• Support technology development qualification milestones from conception through manufacturing installation.
   

Other Responsibilities

• Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.

Required Qualifications

• Education – Actively pursuing a Masters or Ph. D. in Electrical Engineering or Solid State Physics or related field through an accredited degree program during the time of internship.
• A basic knowledge of modern semiconductor device physics and device characterization, and of semiconductor processing with emphasis on wide band gap materials like the III-N material system
• Experience with GaN HEMT device characterization (DC, s-parameter, loadpull, pulsed I-V) and fabrication.
• Must have at least an overall 3.0 GPA and be in good academic standing.
• Language Fluency - English (Written & Verbal)
• Ability to work at least 40 hours per week during the internship.
   

Preferred Qualifications

• Prior related internship or co-op experience
• Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.
• Project management skills, i.e., the ability to innovate and execute on solutions that matter; the ability to navigate ambiguity.
• Strong written and verbal communication skills
• Strong planning & organizational skills
• Educational experience in modern device physics (FET, BJT, and HEMT devices, bulk and SOI device structures). Including associated electrical test and analysis methods of discrete device structures.
• Research experience in GaN e-mode or d-mode HEMT RF High Frequency or Power High Voltage devices, or Wide Bandgap Device (WBG) devices.
• Fundamental understanding of WBG device physics like dispersion, traps, self-heating, buffer design, and analysis techniques.
• Experience in semiconductor processing in GaN, CMOS, SiGe technologies for RF.
• Experience in fabrication and electrical characterization of GaN HEMT devices.

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Expected Salary Range

$20.00 - $40.00

Expected Salary Range

$0.00 - $0.00

The exact Salary will be determined based on qualifications, experience and location.