- Location
- Korea-Seoul-HiBrand, Korea, Republic of
- Type
- Full-time
- Department
- Engineering
- Education
- PhD
- Closing date
- Today
- Source
- Workday
Description
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Job Description:
Job Description (RF IC designer)
Candidate will work on the most advance and challenging RF power amplifier in RF front-end modules. Working closely with RF front-end modules team, layout team and validation team, candidates will participate in all phase of the development, including, architecture, system, transistor-level circuit design, top level simulations, layout, and validation support.
Job Requirements:
- MS degree or PhD with hands-on experience in RF power amplifier or related RFIC circuit design.
- Designing RF power amplifiers, performing simulations, and correlating them with measured results.
- Solid knowledge of RF IC design, device physics, microwave and electromagnetics.
- Solid RF and Analog layout knowledge and experience.
- Hand-on experience designing ET, APT, and Doherty PAs.
- Proficiency with ADS, Cadence Virtuoso, HFSS, and ETH.
- Strong understanding of ET/APT behavior, including linearity, memory effects, AM-PM distortion, and thermal effects.
- Good lab skills in circuit characterization.
- Strong debugging and problem solving skills.
- A self-starter and team player with strong desire to continue to learn on the job.
- Strong desire and commitment.
- Good communication skills.
Broadcom is proud to be an equal opportunity employer. We will consider qualified applicants without regard to race, color, creed, religion, sex, sexual orientation, national origin, citizenship, disability status, medical condition, pregnancy, protected veteran status or any other characteristic protected by federal, state, or local law. We will also consider qualified applicants with arrest and conviction records consistent with local law.
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